Efficient source mask optimization with Zernike polynomial functions for source representation
نویسندگان
چکیده
منابع مشابه
Efficient source mask optimization with Zernike polynomial functions for source representation.
In 22nm optical lithography and beyond, source mask optimization (SMO) becomes vital for the continuation of advanced ArF technology node development. The pixel-based method permits a large solution space, but involves a time-consuming optimization procedure because of the large number of pixel variables. In this paper, we introduce the Zernike polynomials as basis functions to represent the so...
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As lithography still pushing toward to low-k1 region, resolution enhancement techniques (RETs) including source optimization (SO) and mask optimization (MO) are expected to overcome the fundamentally physics in optics. Recently inverse lithography (IL) is widely studied for source and mask optimization (SMO) to enhance the resolution for over diffraction limit integrate circuit (IC) patterns. I...
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Source mask optimization (SMO) is a leading resolution enhancement technique in immersion lithography at the 45-nm node and beyond. Current SMO approaches, however, fix the numerical aperture (NA), which has a strong impact on the depth of focus (DOF). A higher NA could realize a higher resolution but reduce the DOF; it is very important to balance the requirements of NA between resolution and ...
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Optical lithography has enabled the printing of progressively smaller circuit patterns over the years. However, as the feature size shrinks, the lithographic process variation becomes more pronounced. Source-mask optimization (SMO) is a current technology allowing a co-design of the source and the mask for higher resolution imaging. In this paper, we develop a pixelated SMO using inverse imagin...
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Mask topography effects need to be taken into consideration for a more accurate solution of source mask optimization (SMO) in advanced optical lithography. However, rigorous 3D mask models generally involve intensive computation and conventional SMO fails to manipulate the mask-induced undesired phase errors that degrade the usable depth of focus (uDOF) and process yield. In this work, an optim...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2014
ISSN: 1094-4087
DOI: 10.1364/oe.22.003924